[Hicari]
Growth of Homogeneous SiGe Crystals in Microgravity by the TLZ method

Physical Science

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SCIENCE OBJECTIVES FOR EVERYONE

The materials science investigation Growth of Homogeneous SiGe Crystals in Microgravity by the TLZ Method (Hicari) aims to verify the crystal-growth by Travelling Liquidous Zone method, and to produce high-quality crystals of Silicon-Germanium (SiGe) semiconductor using the Japanese Experiment Module-Gradient Heating Furnace (JEM-GHF). Once this method is established, it is expected to be applied for developing more efficient solar cells and semiconductor-based electronics.

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NASA Image: ISS040E054521 - Hicari sample cartridge 2 from the Gradient Heating Furnace (GHF) is removed in preparation for return on SpaceX-4.

NASA Image: ISS040E054523 - Hicari sample cartridge 2 from the Gradient Heating Furnace (GHF) is removed in preparation for return on SpaceX-4.

NASA Image: ISS035E006283 - Photo documentation of the Growth of Homogeneous SiGe Crystals in Microgravity by the TLZ Method (Hicari) Experiment Sample Cartridge (SC) following its removal from the Kobairo Rack during Expedition 35.

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PRINCIPAL INVESTIGATOR(S)

KINOSHITA Kyoichi [JAXA]

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