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  5. Crystal Growth of Alloy Semiconductor Under Microgravity
2021.02.22
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[Alloy Semiconductor]
Crystal Growth of Alloy Semiconductor Under Microgravity

  • Physical Science
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SCIENCE OBJECTIVES FOR EVERYONE

The Crystal Growth of Alloy Semiconductor Under Microgravity (Alloy Semiconductor) investigation aims to develop a clear understanding of how semiconductor materials grow and crystallize in microgravity. The materials studied are also known to be useful as devices which convert heat into electricity (thermoelectrics). These studies may ultimately shed light on how higher quality crystals may be derived from other materials or incorporated into other devices such as solar cells.

Experiment Description

RESEARCH OVERVIEW

The purpose of the present research project is to make clear the factors for crystal growth of a high-quality bulk alloy semiconductor by investigating (1) solute transport in liquid and (2) surface orientation dependence of growth kinetics under microgravity and terrestrial conditions.

Media Gallery

NASA Image: ISS035E007095 - A close-up view of an alloy cartridge to be installed in the Gradient Heating Furnace (GHF) of the Kobairo rack for the Alloy Semiconductor investigation. Image was taken in the Kibo Japanese Experiment Pressurized Module (JPM) aboard the International Space Station (ISS).
NASA Image: ISS040E139205 - Photographic documentation aboard the International Space Station (ISS) of the removal of an Alloy Semiconductor cartridge for return on a future flight.

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PRINCIPAL INVESTIGATOR(S)

INATOMI Yuko [JAXA]

JAXA’s Utilization Themes List

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